EM02N08F
General Description
Features
VDS= 20 V, ID = 0.75 A
RDS(on) < 380mΩ @ VGS = 4.5 V
RDS(on) < 450mΩ @ VGS = 2.5 V
RDS(on) < 800mΩ @ VGS = 1.8 V
Very Fast Switching
Trench MOSFET Technology
Low Threshold Voltage
Pb Free Device
ESD Protected
Applications
DFN1006-3L Package
Marking : Making Code
RoHS Compliant
MSL1